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Polysilicon Resistor Process

IP.com Disclosure Number: IPCOM000052349D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Leas, JM Nagarajan, A [+details]

Abstract

This article describes a process for manufacturing polysilicon resistor using only one mask per resistor value. To avoid grain size growth and boron redistribution caused by high temperatures, the process is implemented after the base and emitter are formed.