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Polysilicon Resistor Process Disclosure Number: IPCOM000052349D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Leas, JM Nagarajan, A [+details]


This article describes a process for manufacturing polysilicon resistor using only one mask per resistor value. To avoid grain size growth and boron redistribution caused by high temperatures, the process is implemented after the base and emitter are formed.