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Fabrication Process for Higher Gain in Bipolar Circuits

IP.com Disclosure Number: IPCOM000052350D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Nagarajan, A Sarkary, HG [+details]

Abstract

This article is directed to a method for improving the performance of bipolar transistor circuits by increasing the effective base doping of the active device. An increase in effective base doping means that the net integrated base doping of the active region of the transistor is reduced. For merged transistor logic arrays, where the NPN transistor is operated in the inverse mode, it is necessary to have a net integrated base doping reduced by 30-40% compared to standard designs. A convenient way of achieving higher performance by increasing the effective base doping, i.e., reducing the integrated base doping, is set forth hereinbelow.