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Bipolar Circuits Using Pinch off MESFET Process

IP.com Disclosure Number: IPCOM000052351D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Related People

Abbas, SA Anantha, NG Bhatia, HS Srinivasan, GR [+details]


MESFETS and bipolar transistors are integrated on the same chip using subcollector isolation and epitaxial techniques to avoid autodoping effects that otherwise might preclude the attainment of MESFET pinchoff. Thus, a family of bipolar MESFET circuits are realizable in which the MESFETS are operated in either the linear or saturation regions.