Bipolar Circuits Using Pinch off MESFET Process
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
MESFETS and bipolar transistors are integrated on the same chip using subcollector isolation and epitaxial techniques to avoid autodoping effects that otherwise might preclude the attainment of MESFET pinchoff. Thus, a family of bipolar MESFET circuits are realizable in which the MESFETS are operated in either the linear or saturation regions.