Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Bipolar Circuits Using Pinch off MESFET Process

IP.com Disclosure Number: IPCOM000052351D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Abbas, SA Anantha, NG Bhatia, HS Srinivasan, GR [+details]

Abstract

MESFETS and bipolar transistors are integrated on the same chip using subcollector isolation and epitaxial techniques to avoid autodoping effects that otherwise might preclude the attainment of MESFET pinchoff. Thus, a family of bipolar MESFET circuits are realizable in which the MESFETS are operated in either the linear or saturation regions.