Browse Prior Art Database

Static Ram Cell with Selected Barrier Height Schottky Diodes

IP.com Disclosure Number: IPCOM000052354D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Denis, BA Eardley, DB [+details]

Abstract

The use of selected barrier height Schottky diodes enables the circuit designer to minimize power supply voltage requirements of a random-access memory (RAM) cell without jeopardizing cell stability or cell switching speed.