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Static Ram Cell with Selected Barrier Height Schottky Diodes Disclosure Number: IPCOM000052354D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Denis, BA Eardley, DB [+details]


The use of selected barrier height Schottky diodes enables the circuit designer to minimize power supply voltage requirements of a random-access memory (RAM) cell without jeopardizing cell stability or cell switching speed.