Browse Prior Art Database

Polysilicon Polysilicon Read Only Memory

IP.com Disclosure Number: IPCOM000052355D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Av-Ron, M Brown, DK Shatzkes, M [+details]

Abstract

When a capacitor structure that includes an N type polysilicon layer over a silicon dioxide insulator which is, in turn, over a P type polysilicon layer breaks down, a PN junction is formed. The capacitor has then been transformed into a diode. In order to form a read-only memory using such a structure, overlapping perpendicular polysilicon lines 5 and 6 of different doping types are deposited over a silicon substrate 7 with silicon dioxide insulation 8 between the lines and the substrate, as shown in the figure.