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Minor Modifications in Standard Semiconductor Processing Allow Drastic Parasitic Substrate Current Reduction

IP.com Disclosure Number: IPCOM000052363D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Benichou, C Blachere, JM Braquet, H [+details]

Abstract

This process may find application where high injection phenomena take place either in transistors or silicon controlled rectifiers (SCRs). When a PN diode is used at a high injection rate, the hole current takes advantage of the electron current and a large amount of it flows into the substrate.