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Versatile Technique for Contact Metallurgy by Using Ion Beam Mixing Induced Silicides

IP.com Disclosure Number: IPCOM000052444D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Chao, HH Petersson, CS Tsai, MY [+details]


In semiconductor device fabrication as electron beam lithography comes into use, temperatures above 550 degrees C are required for annealing the positi and neutral traps that are introduced in the process, but existing Al metallurgy systems are limited by Al-Si interdiffusion to temperatures around 400 degrees C.