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Junction Delineation by Plasma Etching

IP.com Disclosure Number: IPCOM000052505D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Blake, HH Gajda, JJ [+details]


With the semiconductor industry moving to shrink geometries and also making junctions that are extremely shallow, conventional techniques, such as chemical etching do not delineate diffused or implanted junctions for precise measurements. The technique and procedure outlined in this article successfully delineates and measures a junction only 3000 angstroms deep. In addition, a SI(3)N(4) layer 1600 angstroms in thickness, a SiO(2) laye angstroms in thickness and a TiW layer 1600 angstroms in thickness can also be d with a single plasma etch. The following details the procedure which can be used on both bipolar and memory devices.