Fabricating High Performance Bipolar Transistors
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
A method is described for fabricating bipolar transistors for integrate circuits. The transistors have high-performance characteristics because the extrinsic base resistance is reduced due to submicron spacing between emitter and base metal contacts. In addition, the base-collector and collector-isolation capacitances are also low because of the close spacing between emitter and base metal contacts.