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Fabricating High Performance Bipolar Transistors

IP.com Disclosure Number: IPCOM000052511D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

A method is described for fabricating bipolar transistors for integrate circuits. The transistors have high-performance characteristics because the extrinsic base resistance is reduced due to submicron spacing between emitter and base metal contacts. In addition, the base-collector and collector-isolation capacitances are also low because of the close spacing between emitter and base metal contacts.