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Simple Method for Precisely Measuring Positive Resist or Developer Lot To Lot

IP.com Disclosure Number: IPCOM000052515D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Agopian, GK Hood, FP Jeter, BH Lounsbury, JB Narasimham, MA [+details]

Abstract

This procedure comprises the use of a laser end point detect (LEPD) apparatus, or equivalent, to measure the resist dissolution rate as a function of exposure energy. A comparison is then made to a standard resist or developer, run in parallel, to determine the lot-to-lot variation of the positive resist or developer. Unexposed dissolution rate is also measured.