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Complementary Bipolar FET Integrated Circuit

IP.com Disclosure Number: IPCOM000052520D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Dorler, JA Magdo, IE Yeh, TH [+details]

Abstract

The drive restrictions of MOS devices severely limit their performance; low current, high impedance drive capability results in large resistance-capacitance (RC), time constants. The ability to use bipolar devices, PNP and NPN, both internally and, specifically, as drivers has been shown to improve the overall performance by a factor of more than two times. This is particularly important in the area of arrays, or even main memory, where high capacitive nets, both on and off the chip, are the rule rather than the exception. Bipolar devices have drive impedances measured in the tens of ohms as compared to FET devices which are measured in kilo-ohms.