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Improved Dummy Cell for a Random access Memory Disclosure Number: IPCOM000052522D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Wang, W [+details]


This is a twin dummy cell for generating a half-charge which is used as a reference in sensing a random-access memory. The twin dummy cell includes a pair of full-size dummy random-access memory (DRAM) cells.