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Read Write Control Circuit Reference Voltage Generator

IP.com Disclosure Number: IPCOM000052524D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Marcello, B Rivadeneira, CG Struk, JR [+details]

Abstract

For the read/write control of a memory cell array this circuit provides a reference voltage (at output SAR (Storage Address Register)) which with a reduction of one VBE drop reproduces well and very closely follows the correspondingly selected cell midway voltage of actual matrix cells. Driven from the circuit output is a tri-state read/write control circuit which is described in the following article. The tri-state circuit translates the reference voltage at output SAR to a voltage equal to the selected cell midway voltage. The midway voltage is finally used to drive sense amplifiers for reading a Harper cell array matrix.