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Method of Producing Defined Edge Profiles in the P+ Polysilicon of a FET Process

IP.com Disclosure Number: IPCOM000052546D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Briska, M Eisenbraun, E [+details]

Abstract

To obtain a well-defined profile with oblique edges in the P+ doped polysilicon, the desired profile is produced by wet etching a silicon dioxide layer pyrolytically grown on the polysilicon layer, by imaging this profile in the P+ polysilicon layer by arsenic implantation, and by removing the arsenic-doped polysilicon by etching with a mixture of ethylene diamine, pyrocatechol and water.