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Reactive Surface Layer Formation using Surface Charging

IP.com Disclosure Number: IPCOM000052643D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Harper, JME Heiblum, M [+details]

Abstract

A surface reaction process is described wherein reactive gas ions are used for compound or oxide formation, and a low energy (less than 100 electron volts) ion beam is directed at a surface for such compound or oxide formation. The degree of charging of the surface being bombarded is controlled by external electrical means, such as capacitor or R-C networks, connected to the workpiece.