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Light Absorbing Layer Disclosure Number: IPCOM000052647D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Solomon, PM [+details]


This article describes a scheme for avoiding nonuniform absorption of the laser light during laser annealing of a silicon wafer due to the presence of patterns on the wafer. A technique has recently been described [*] where light from a laser source has been used to heat briefly the surface of a silicon wafer and anneal damage due to ion implantation