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Stitched Contact Structure for MOSFET Disclosure Number: IPCOM000052701D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

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Betz, PW Leipold, WC Wilcox, RB [+details]


This metallization technique for MOSFET devices reduces the introductio of contaminants through metal to diffusion vias by using a plurality of small vias rather than a large continuous contact hole.