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This metallization technique for MOSFET devices reduces the introductio of contaminants through metal to diffusion vias by using a plurality of small vias rather than a large continuous contact hole.
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Stitched Contact Structure for MOSFET
This metallization technique for MOSFET devices reduces the introductio of
contaminants through metal to diffusion vias by using a plurality of small vias
rather than a large continuous contact hole.
MOSFET devices can fail during use due to the migration of
ionic contaminants into or near either thick or thin oxide gate
regions. These contaminants alter the field created by the applied
gate voltage and may artificially reduce the device threshold voltage
to a point where the MOSFET cannot be turned off. Ionic
contaminants, such as sodium, migrate to gate areas via the mechanism
of field-assisted diffusion due to fields present from device wiring.
Contaminant diffusion barriers, such as silicon nitride and
phosphosilicate glass, are commonly used to passivate devices to
prevent such effects. Breaches in diffusion barriers between wiring
metallization and the edges of the breach and associated processing
circumvent the effectiveness of the barrier layer. These effects
occur specifically around vias used to allow metallurgy to contact
the semiconductor substrate. The larger the opening, the easier it
is for contamination to migrate into areas of the device subject to
applied fields. This problem may be alleviated by reducing the size
of contacts, thus decreasing the effective edge length of each
The figure illustrates an example of stitched contact structure applied to a
typical metal gate MOSFET driver device. Source...