The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Stitched Contact Structure for MOSFET

IP.com Disclosure Number: IPCOM000052701D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue


Related People

Betz, PW Leipold, WC Wilcox, RB [+details]


This metallization technique for MOSFET devices reduces the introductio of contaminants through metal to diffusion vias by using a plurality of small vias rather than a large continuous contact hole.