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Browse Prior Art Database

Double Gate Bipolar Compatible N Channel Junction FET

IP.com Disclosure Number: IPCOM000052767D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Muggli, RA [+details]

Abstract

This N-channel field-effect transistor (FET) has two gate electrode diffusions arranged with a buried isolation layer for defining a shallow depth channel in an epitaxial layer in a standard bipolar transistor fabrication process without any additional process steps.