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A new positive photoresist for use in electron beam exposures has been developed.
English (United States)
This text was extracted from a PDF file.
100% of the total text.
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Polyvinyl Alcohol as a Photoresist for Electron Beam Exposure
A new positive photoresist for use in electron beam exposures has been
Polyvinyl alcohol is dissolved in water, spin coated on silicon wafers, and
baked at 70 degrees C. The resulting films are hard, non-tacky and safe to
handle in room light. A series of silicon wafers were coated with approximately 1.5 mu m of the material, exposed by electron beam with varying conditions and
developed in solution of 75% wafer/25% acetone. Initial experiments used a dose
between 0.5 and 20x10/-5/ coulombs/cm/2/ and development times of between O.5 and 1.5 minutes. Under these conditions it was possible to resolve 0.5 mu m
lines and spaces, and the material appears to be about 5 times faster than, e.g.,
When used as a photoresist, it has the following advantages: 1. The material
can be expected to adhere well to metal (including silicon) surfaces by virtue of
its high hydroxyl content. 2. The use of water as a solvent and developer
minimizes the need for noxious organic solvents. 3. The material is cheap and
plentiful so that a ready supply can always be assured. 4. Special lighting is not
necessary in handling the coated material.