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A method for producing microscopic cleavage in a periodic array by deposition of a highly stressed film onto a sample, thereby producing controlled cleavage in crystalline materials is described.
English (United States)
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Controlled Microleaving Process
A method for producing microscopic cleavage in a periodic array by
deposition of a highly stressed film onto a sample, thereby producing controlled
cleavage in crystalline materials is described.
It has been found that stress in films can be relieved by a regular fracture
pattern in crystalline materials. The fracture will occur along cleavage planes,
and the stress relief will induce a periodic fracture.
Films of niobium were deposited on Si(3)N(4), which was deposited on
(100)Si. The niobium films were about 1 mu thick and, when scribed parallel to a
100 plane, we found a periodic cleavage along the 110 planes with
approximately a 2 mu period. This is shown in Fig. 1.
The process for microcleaving crystals was also examined on GaAs with
various orientations. Figs. 2A and 2B show cleavages on (100)GaAs and
This process allows the cleaving of crystalline materials on a scale finer than
any mechanical method. Also, devices can be prepared on a heretofore
unachievable scale (i.e., GaAs laser arrays).
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