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Fabrication of Three Dimensional Micro Electronic Structures by Molecular Beam Epitaxy

IP.com Disclosure Number: IPCOM000052807D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11

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Rupprecht, HS Woodall, JM [+details]


Three-dimensional semiconductor device structures may be fabricated by control of surface stoichiometry of a growing compound semiconductor device body such that a dopant can be caused to enter particular sublattice sites.