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Low Temperature Plasma Deposited Electron Injector Oxide

IP.com Disclosure Number: IPCOM000052868D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Hutchins, GL [+details]

Abstract

This method provides a wide range of silicon in silicon-rich insulators at relatively low temperatures, equal to or less than 350 Degrees Celsius, using plasma-enhanced deposition of silane and oxygen. These silicon-rich insulators may be used advantageously in electron injectors, as taught in, e.g., U.S. Patent 4,104,675.