Low Temperature Plasma Deposited Electron Injector Oxide
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
This method provides a wide range of silicon in silicon-rich insulators at relatively low temperatures, equal to or less than 350 Degrees Celsius, using plasma-enhanced deposition of silane and oxygen. These silicon-rich insulators may be used advantageously in electron injectors, as taught in, e.g., U.S. Patent 4,104,675.