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Palladium Contact Metallurgical Process

IP.com Disclosure Number: IPCOM000052902D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Gartner, HM Sorbello, F [+details]

Abstract

The following two process options are useful in forming ohmic contacts to silicon devices and, more particularly, to devices in double polysilicon memory products.