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Palladium oxide (PdO) may inadvertently be formed on palladium surfaces such that free palladium cannot be etched by conventional techniques.
English (United States)
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Palladium Oxide Etching Process
Palladium oxide (PdO) may inadvertently be formed on palladium surfaces
such that free palladium cannot be etched by conventional techniques.
The following process has the capability of removing any PdO that may have
been formed due to the presence of either oxygen or water vapor in the furnace
ambient without attacking or causing damage to any surrounding semiconductor
1) Immerse the substrate having a palladium film thereon, such as a
semiconductor wafer, into a solution of sodium hypophosphite (NaH(2)PO(2))
and potassium hydroxide (KOH) at 20 degrees C to 5O degrees C for two
minutes. solution comprises 67 grams/liter parts NaH(2)PO(2) and 25 grams/liter
2) Rinse the wafer in deionized H(2)0 for one minute.
3) Etch the now PdO-free palladium surfaces in KI + I(2) + H(2)O for about