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Stepped Oxide CCD With Asymmetrical Oxide Geometry

IP.com Disclosure Number: IPCOM000052940D
Original Publication Date: 1981-Aug-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Alcorn, GE De La Moneda, FH Kotecha, HN [+details]

Abstract

A process is disclosed to fabricate stepped-oxide charge coupled device (CCD) electrodes which are asymmetrical in the direction of charge flow to improve charge transfer efficiency. A hardened photoresist mask technique is disclosed to form the stepped-oxide structure.