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Preparation of Amorphous Hydrogenated Silicon by Chemical Vapor Deposition

IP.com Disclosure Number: IPCOM000053005D
Original Publication Date: 1981-Aug-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Plecenik, RM Scott, BA [+details]

Abstract

The low cost of amorphous silicon (a-Si) thin film devices has made this material highly attractive as a candidate for solar cell, photoconductor, and thin film transistor technologies. The most interesting form of a-Si, however, is that containing up to approximately 35 atomic % hydrogen, obtained in the plasma deposition reactions of mono- or higher silanes. In such ``amorphous hydrogenated silicon'' (a-Si:H), hydrogen eliminates dangling bond gap states, thus improving the transport properties and allowing the films to be doped n- and p-type for various potential electronic applications.