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Selective Etching of Carbon From Silicon Surfaces

IP.com Disclosure Number: IPCOM000053007D
Original Publication Date: 1981-Aug-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Gambino, RJ Leary, PA [+details]

Abstract

Carbon is an ubiquitous contaminant on silicon surfaces. It has many sources of origin including photoresist residues, organics in deionized water, and pump oil polymerized on the surface as in ion implantation. On the other hand, carbon is well suited as a sputter etch mask because of its low sputter yield (0.072 atoms/ion @ 1 KeV, Ar/+/[1]. Its use as a mask is limited, in part, because it is so difficult to remove for subsequent processing steps.