Browse Prior Art Database

Storage Cell for Electronically Alterable Read Only Storage Arrays Using Dual Electron Injector Structure Charge Injectors

IP.com Disclosure Number: IPCOM000053013D
Original Publication Date: 1981-Aug-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Young, DR [+details]

Abstract

Two gates are used that are capacitatively coupled to the floating gate. As shown in Fig. 2, the control gate is used for selective reading and selective writing of a ``1''. The reset gate is used for blanket erasing to place all the cells in the ``0'' state. The ``0'' state has negative charge on the floating gate. This is accomplished by applying a positive voltage to the reset gate which is coupled to the floating gate, making it (the floating gate) go positive with respect to the control gate which is at zero potential. The voltage applied between the floating gate and the control gate is sufficient to induce a flow of electrons from the control gate to the floating gate, leaving the floating gate with a negative charge.