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Monolayer Sn Technique for Solving the Substrate Film Interface High Resistance Problem in Molecular Beam Epitaxy

IP.com Disclosure Number: IPCOM000053197D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Chang, CA Heiblum, M Nathan, MI [+details]

Abstract

Gallium arsenide (GaAs) devices that contain layers grown by molecular beam epitaxy (MBE) exhibit a non-linear voltage current (IV) characteristic high-resistance interface with the substrate when sputter anneal cleaning of the substrate is employed prior to growth of an N/+/ GaAs layer.