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Self Aligned Silicide Conductors in FET Integrated Circuits

IP.com Disclosure Number: IPCOM000053198D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Osburn, CM Tsai, MY Zirinsky, S [+details]

Abstract

This article relates generally to semiconductor devices and processes and more particularly to FET devices which have silicide conductors which are self-aligned to the source, drain and gate of the FET.