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This article describes the use of titanium nitride (TiN) and silicon nitride (Si(3)N(4)) for very large-scale integration (VLSI) circuit contacts.
English (United States)
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Using Titanium Nitride and Silicon Nitride for VLSI Contacts
This article describes the use of titanium nitride (TiN) and silicon nitride
(Si(3)N(4)) for very large-scale integration (VLSI) circuit contacts.
When using titanium (Ti) as contact metallurgy in integrated circuits, it not
only maintains a very low contact sheet resistivity to n-type contacts, but it also
provides a good diffusion barrier between Al and Si. However, when Ti is totally
reacted with Al, it loses its barrier behavior. For 1000 angstroms Ti, the reaction
between Ti and Al limits the annealing temperature to 450 degrees C for 30 to 60
minutes, and not to 500 degrees C.
This article describes a novel technique for using TiN inside contact holes as
contact material and forming Si(3)N(4) at the periphery of the contacts. It is well
known that TiN is a good barrier with low electrical resistivity that allows devices
to be annealed at 500 degrees C or higher without junction degradation, while
the Si(3)N(4) is used to prevent any possible Al penetration through the
peripheral and pin-hole areas where TiN may not cover. The TiN is formed at
contacts by first annealing Ti at 500 degrees C in nitrogen ambient for 30 to 60
minutes to saturate Ti with nitrogen without TiSi(2) formation. A second high
temperature annealing cycle should follow at one of the following conditions for
30 to 60 minutes. a) In N(2) at ~/~ 1200 degrees C b) In NH(3) at ~/~ 950
degrees C c) In NH(3) plasma at ~/~ 800 degrees...