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High via resistance of ball-limiting metallurgy, resulting from the use of polyimide insulating layers is lowered by a 0(2) plasma ash and a HF dip clean either before or after polyimide film curing.
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Process for Improving Ball Limiting Metallurgy
High via resistance of ball-limiting metallurgy, resulting from the use of
polyimide insulating layers is lowered by a 0(2) plasma ash and a HF dip clean
either before or after polyimide film curing.
A layer of polyimide precursor is coated onto the conductive metallurgy layer
and baked at 120 Degrees C. The layer is patterned to form vias by coating a
layer of positive resist, exposing the resist and removing the exposed portions of
the resist and the underlying polyimide precursor with tetramethylammonium
hydroxide down to the metal. The resist layer is stripped, and the remaining
polyimide percursor layer is ashed in an oxygen plasma at 300 watts for one
minute, dip cleaned in 7:1 buffered HF for 30 seconds, and rinsed in water. A
cured polyimide layer is then formed by baking in a nitrogen atmosphere. The
ball-limiting metallurgy and solder balls are then formed by evaporation.