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Deep Ultraviolet Lithography Mask

IP.com Disclosure Number: IPCOM000053276D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Fredericks, EC Lopata, AD Moreau, WM [+details]

Abstract

A low reflectivity mask for deep ultraviolet lithography (200-300 nm) is fabricated from a film matrix containing a photoformed azo dye in a phenolic resin binder. Films of 1-2 Mu m thickness are cast on quartz plate blanks from an alkali insoluble phenolic resin such as para-octyl phenol containing 5-15% by weight of an azo dye precursor such as 2-diazo-1-napthoquinone-4-sulfonyl ester.