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Process for Stripping Cured Polyimide and Silicon Nitride for Failure Analysis Disclosure Number: IPCOM000053278D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

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Dziobkowski, CT Ryan, JG Wing, DM [+details]


In order to uncover discontinuities between first and second metals in high density integrated circuits via resistance studies, it is necessary to strip both polyimide and silicon nitride layers from the metal layers. For the failure analysis to be definitive, all insulators have to be removed without damaging either first or second metal patterns. This is difficult to accomplish using conventional wet chemical techniques. A process for stripping cured polyimide and silicon nitride layers is possible by using a plasma etch process.