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Performance Enhancement of Bipolar Transistor by Emitter Depth Reduction Disclosure Number: IPCOM000053285D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

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Gaur, SP Lechaton, JS Srinivasan, GR [+details]


It is known that the performance, that is device speed, of the bipolar transistor can be improved by reducing the emitter thickness. However, it is also known that a reduction in emitter thickness causes a degradation in the current gain. The process described herein and the resulting structure decrease the emitter thickness without unduly reducing the current gain of an NPN transistor. ***** THIS IS AN ABSTRACT - (Image Omitted)