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Modified Hybrid Process for Contact Metallurgy Disclosure Number: IPCOM000053286D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

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Berenbaum, L Joy, RC Shepard, JF [+details]


This process can be used to form contact metallurgy for either MOSFET or bipolar devices. The active devices are formed as is known in the art in a semiconductor substrate, and contact openings are made to the various elements of these devices through an appropriate insulating layer. Then the process continues as follows: 1. Blanket RF magnetron sputter deposit about 1200 angstroms of titanium/tungsten (TiW) over the surface having the openings. 2. Using photoresist technology, produce a lift-off pattern in the resist on top of the TiW. 3. 10:1 ammonium fluoride:hydrofluoric acid (ash residual and oxides removed) H(2)O rinse and blow dry. 4. Deposit Ti/aluminum copper (Al/Cu) film thereover. 5. Lift off background metal (Ti/Al/Cu) n/methylpyrrolidinone solvent and acetone rinse. 6.