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Oxygen Implantation for Polysilicon Resistor TCR Optimization

IP.com Disclosure Number: IPCOM000053297D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Lee, CH [+details]

Abstract

The temperature coefficient (TCR) of polycrystalline silicon (polysilicon) resistors has been found to increase with polysilicon thickness and grain size. As a result, it depends on the history of the fabrication process because of grain growth and morphology change. Described is a technique to implant oxygen into polycrystalline silicon film to form silicon oxide clusters, upon heat treatment, to minimize and stabilize the grain size, thereby making it possible for the temperature coefficient of the polysilicon resistors to be optimized and stabilized.