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Bipolar Prom With Reprogramming Capability

IP.com Disclosure Number: IPCOM000053311D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Howard, D Lebesnerais, G Mollier, P [+details]

Abstract

Shown in Fig. 4 is a cell, operating as shown with reference to Figs.1 to 3, which can be used for making a high density, high speed programmable read-only memory (PROM) with reprogramming capability.