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Determination Of Series Resistance And Oxide Capacitance For MOS Measurements

IP.com Disclosure Number: IPCOM000053390D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Corcoran, RA Kaloustian, A Keenan, WA Yun, BH [+details]

Abstract

Series bulk and contact resistance can account for substantial error in results derived from MOS capacitance-voltage (C-V) measurements on high resistivity semiconductor wafers at frequencies at or above one megahertz. The measured capacitance Cm is related to the actual capacitance Ca as follows: Ca Cm = divided by 1+ Omega/2/ R/2/ Ca/2/ where Omega = frequency, and R = bulk and contact resistance.