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Polysilicon Oxide Process For Small Line Gaps

IP.com Disclosure Number: IPCOM000053420D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Varshney, RC [+details]

Abstract

This process permits line gaps in polysilicon smaller than obtainable by conventional photolithography. The process is very suitable for forming recessed oxide regions of the order of 2.5 microns. VMOS openings may be controlled to preset limits by this process. Two process sequences are described below. One process relates to forming small gaps in an oxide. The other process relates to forming small gaps in polysilicon.