Self Aligned VMOS Structure Using Reactive Ion Etching
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12
This VMOS device eliminates alignment devices and results in smaller device sizes than conventional VMOS devices. The drain diffusion around the V-groove is independent of mask and etch biases resulting in smaller diffusion capacitance and bit line capacitance when the device is employed in a random-access memory. The improved VMOS device is achieved by precisely etching an opening in an oxide mask layer to expose an underlying substrate in which a V-groove is to be located. The details of the process for fabricating the device are described below.