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Low Power Bipolar Random Access Memory Array Disclosure Number: IPCOM000053431D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

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Varadarajan, HD [+details]


This random-access memory is an improvement over that previously published in the IBM Technical Disclosure Bulletin 21, 2832-2838 (December 1978). The present array uses a single low voltage supply to achieve good speed and low power. A unique sense drive circuit enables the array to work on the low voltage supply. A current equalizing resistor improves the control of current flow in each storage circuit. A low barrier Schottky diode improves the switching performance during writing.