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A circuit has been developed which writes a Schottky diode coupled random acess memory cell without the use of large bit line currents and without disturbing unselected bits.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
91% of the total text.
Page 1 of 1
Write Circuit Which Selects One Byte Per Word
A circuit has been developed which writes a Schottky diode coupled random
acess memory cell without the use of large bit line currents and without disturbing
The circuit comprises a matrix of 128 x 160 Schottky barrier diode coupled
ramdom access memory cells and the peripheral circuits to read and write data
into the matrix. Writing of Schottky barrier diode coupled random access
memory cells has been a problem in past designs. Two previously used
1) Using a large bit line write current compared to the read current for the bits
of the selected byte. The large ratio of currents imposes a read delay penalty,
2) Pulling down the word top line for all bits of the selected word, and
simultaneously increasing the bit line current for the bits of the selected bytes.
This tends to disturb the unselected bits of the selected word.
In the present embodiment the value of the write current is equal to the read
current. The disturbance problem is avoided by pulling down the word line only
for the selected byte, thereby leaving full voltage upon the cells of the unselected
bytes. This results in pulling down the word top voltage of ten bits out of 160 bits
in the matrix. This feature enables writing of the selected ten bits without
disturbance of the unselected 150 bits. Since the concentration of the minority
carriers in the emitter has an effect on bandwidth, conventional methods for