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Method For Reducing Current Gain (BETA) After Emitter Formation

IP.com Disclosure Number: IPCOM000053435D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Phillips, A, Jr. [+details]

Abstract

The present emitter compensation approach is based upon the recognition of the principle that in NPN transistors, the concentration of the P-type (acceptor) impurity which is a minority carrier impurity in the N-type emitter region will have a direct effect on the current gain (Beta) of the transistor. This principle is applied to produce transistors with maximum Beta by maintaining the P-type impurities in the emitter regions at the minumum level.