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Electrically Alterable Read-Only Storage Using Buried Contact

IP.com Disclosure Number: IPCOM000053459D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Tien, PC [+details]

Abstract

A cell structure for an electrically alterable read-only storage (EAROS) utilizes a buried contact aligned with respect to a first polysilicon gate which is used as the floating gate (Fig. 1). A second polysilicon gate serves as a control gate.