Browse Prior Art Database

Dense Read Only Storage

IP.com Disclosure Number: IPCOM000053461D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Zbrozek, JD [+details]

Abstract

A dense read-only storage (ROS) organization utilizes strings of field effect transistors (FETs) that are connected between source and drain islands (Fig. 1). Bit states for locations along s string are established by selectively forming depletion-mode or enhancement-mode FETs. The state of a given location is detected by raising the voltages of all the gate lines except the one for the location of interest and then sensing for the presence or absence of continuity between source and drain islands. For a depletion-mode FET, continuity exists, and the contrary is true for an enhancement-mode FET.