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Fabrication Method For High Performance MESFET

IP.com Disclosure Number: IPCOM000053503D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Rideout, VL [+details]

Abstract

This article describes a method for fabricating metal-semiconductor field effect transistors (MESFETs) employing a self-aligning technique to reduce the separation between the source and drain electrodes.