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Semiconductor integrated circuit isolation can be provided using hydrogenated amorphous silicon which is selectively recrystallized.
English (United States)
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Bipolar Structure With a-Si:H Isolation And Passivation
Semiconductor integrated circuit isolation can be provided using
hydrogenated amorphous silicon which is selectively recrystallized.
An exemplary bipolar circuit structure can be formed from the following
Referring to Fig. 1, on a p-substrate, photomask and ion implant a P or As
subcollector, cover with P or As doped hydrogenated amorphous silicon.
Referring to Fig. 2, ion implant B for the intrinsic base,
apply and define MgO or SiO(2) for emitter and collector
reach-through. Ion implant B for the shallow base.
Referring to Fig. 3, vacuum deposit Al.
Referring to Fig. 4, selectively lift off A1 for the collector
reach-through and emitter ion implants of As or P.
Referring to Fig. 5, remove MgO and Al, except that part
g separating the collector reach-through and the emitter. Laser
Referring to Fig. 6, remove Al.
Referring to Fig. 7, deposit hydrogenated amorphous Si (a-SiH), open
contact holes, deposit Al contacts to the base, emitter and collector regions, and
sinter at 400 degrees C.
Several explanations are in order to understand the above fabrication
technology. In Fig. 1, the deposited a-Si:H layer, although doped with donors,
does not have n-type unless it is recrystallized. The blanket B implant is to
provide conductivity for the base in recrystallized regions. Implants for
subcollector reach-through and for emitter are not at the same energy. The
laser annealing light pulse causes h...