Surface Interface State Passivation
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12
Devices such as MOS devices, when made in semiconductor als having materials having native oxides that provide a poor surface state ed interface, can be improved by hydrogenating the surface by diffusion of hydrogen in the presence of an electric field through an exposed metal contact film and underlying oxide to the surface of the semiconductor. The metal can be later removed or retained as part of the device where appropriate.