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Field-Effect Transistors With Graded Bandgap Gate Insulators

IP.com Disclosure Number: IPCOM000053514D
Original Publication Date: 1980-Jan-01
Included in the Prior Art Database: 2005-Feb-12

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ [+details]

Abstract

An improved metal insulator semiconductor field-effect transistor (MISFET) can be made by employing a graded interface between the insulator and the semiconductor which reduces lattice mismatch strain.